Ipm vs igbt6/15/2023 Vertical cross-section and an equivalent circuit model of a punch-through (PT) IGBT. Figure 1 illustrates the creation of this parasitic thyristor.įigure 1. The main problem with an IGBT is a parasitic PNPN (thyristor) structure that can lead to device failure. At voltage ratings above 200 V, MOSFETs exhibit inferior conduction performance as compared to a BJT.Īn IGBT combines the best of these two worlds to realize a high-performance power switch: it offers the ease of drive of a MOSFET with on-state characteristics of a BJT. However, the major challenge with power MOSFETs is that their on-state resistance increases with device breakdown voltage. With power MOSFETs being voltage-controlled devices, we need simpler drive circuitry. Power BJTs have desirable on-state conduction performance however, they are current-controlled devices and need complex base drive circuitry. In this article, we’ll look at some of the basic concepts of this technology and see how an IPM can extract the best performance possible from an available IGBT device. Overcurrent, overheating, and under-voltage detection are three of the self-protection functions commonly found in an IPM. In this way, the best possible performance can be achieved from an available IGBT technology. It includes the required drive circuitry and the protection functions, as well as the IGBTs. An intelligent power module (IPM) is a power semiconductor module that integrates into a single package all the circuitry required to operate an IGBT.
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